Photoresponses in In₂O₃transparent gate MOS capacitors

• 1 August 1982
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
• Vol. 29  (8) , 1161-1167
• https://doi.org/10.1109/t-ed.1982.20851

Abstract

Keywords

• ANNEALING
• NITROGEN
• DARK CURRENT
• CONDUCTIVITY
• TEMPERATURE
• DEGRADATION
• SPUTTERING