Noise associated with recombination in the emitter space charge region of transistors
- 30 November 1976
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (11) , 909-910
- https://doi.org/10.1016/0038-1101(76)90101-5
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Base resistance measurements on bipolar junction transistors via low temperature bridge techniquesSolid-State Electronics, 1976
- Current-voltage relations and equivalent circuits of transistors at high injection levelsSolid-State Electronics, 1974
- Noise due to generation and recombination of carriers in p-n junction transition regionsIEEE Transactions on Electron Devices, 1968