High sensitivity of VPE-grown InGaAs/InP-heterostructure APD with buffer layer and guard-ring structure
- 15 March 1984
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 20 (6) , 235-236
- https://doi.org/10.1049/el:19840158
Abstract
A planar-type InGaAs/InP-heterostructure APD with an InGaAsP buffer layer was made by using a VPE technique. To avoid the edge breakdown, a guard-ring structure was employed. The average received optical power for a 10−9 error rate at 280 Mbit/s was as low as −43 dBm, which corresponded to 2 and 7 dB improvements over a Ge-APD at 1.52 and 1.59 μm, respectively.Keywords
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