High-power ridge-waveguide AlGaAs GRIN-SCH laser diode

25 September 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (20) , 1081-1082
https://doi.org/10.1049/el:19860741

Abstract

AlGaAs ridge single-quantum-well graded-index separate confinement heterostructure (SQW GRIN-SCH) lasers with typical threshold currents of 9 mA and differential quantum efficiencies between 80% and 85% for 0.4 mm-long cavities have been fabricated with molecular beam epitaxy. Continuous-wave light output increases linearly with the drive current up to approximately 15 times the threshold current. The lasers fail catastrophically at power levels between 65 mW/facet and 85 mW/facet, corresponding to power densities between 2.6 MW/cm² and 3.4 MW/cm².

Keywords

THRESHOLD CURRENT
DRIVE CURRENT
CW LIGHT OUTPUT
POWER LEVELS
9 MA
ALGAAS
THRESHOLD CURRENTS
DIFFERENTIAL QUANTUM EFFICIENCIES
ALGAAS GRIN-SCH LASER DIODE
80 TO 85 PERCENT
MOLECULAR BEAM EPITAXY
GRADED INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE LASERS
POWER DENSITIES
RIDGE-WAVEGUIDE
SEMICONDUCTOR LASER

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