Dynamic Oxygen Equilibrium in Silicon Melts during Crystal Growth by the Czochralski Technique
- 1 January 1982
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 129 (1) , 189-193
- https://doi.org/10.1149/1.2123753
Abstract
A model for the dynamic oxygen concentration in silicon melts during Czochralski growth is presented. The model is found to be in good agreement with experimental results and to account for first order effects on both the absolute oxygen concentration and its axial variations in grown crystals. Approaches aimed at achieving controllable and axially uniform oxygen concentration in crystals grown by the method are discussed.Keywords
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