Anodic growth, dielectric breakdown and carrier transport in amorphous SiO2 films
- 31 July 1969
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 30 (7) , 1885-1895
- https://doi.org/10.1016/0022-3697(69)90256-x
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Anodic growth mechanism of oxides with low ionic conductivitySolid State Communications, 1968
- Noncrystalline Structure and Electronic Conduction of Silicon Dioxide FilmsPhysica Status Solidi (b), 1967
- Anodic Oxide Films for Device Fabrication in SiliconJournal of the Electrochemical Society, 1964
- Electrode Reactions and Mechanism of Silicon Anodization in N-MethylacetamideJournal of the Electrochemical Society, 1964
- Anodic Formation of Oxide Films on SiliconJournal of the Electrochemical Society, 1957
- On the theory of dielectric breakdown in solidsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1947