121 GHz resonant-tunnelling hot electron transistors having new collector barrier structure

15 August 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (17) , 1523-1524
https://doi.org/10.1049/el:19910957

Abstract

This Letter describes a study of the DC and microwave characteristics of resonant-tunnelling hot electron transistors (RHETs) fabricated using a new (i-InAlGaAs/i-GaAs collector barrier structure. The current gain at a low collector–base voltages was improved, enabling the RHETs to operate at low collector–emitter voltages and to decrease the transit time. A cutoff frequency f_T of 121 GHz was achieved at a temperature below 77 K with an emitter current density of 6.7×10⁴ A/cm². This is the highest value yet reported for either hot electron transistors or the quantum-effect devices.

Keywords

LOW COLLECTOR-BASE VOLTAGES
SEMICONDUCTORS
RHETS
RESONANT-TUNNELLING HOT ELECTRON TRANSISTORS
CURRENT GAIN
MICROWAVE CHARACTERISTICS
121 GHZ
EMITTER CURRENT DENSITY
LOW COLLECTOR-EMITTER VOLTAGES
INALGAAS-GAAS
TEMPERATURE
DC CHARACTERISTICS
CUTOFF FREQUENCY
COLLECTOR BARRIER STRUCTURE
TRANSIT TIME
77 K

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