Epitaxial growth of silicon with Hg-Xe lamp light irradiation
- 15 April 1985
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (8) , 2956-2959
- https://doi.org/10.1063/1.335238
Abstract
An epitaxial silicon film was successfully grown on a Si {100} substrate at the susceptor temperature of 730 °C in the SiH2Cl2/H2 system. Irradiation with a mercury‐xenon (Hg‐Xe) lamp during deposition appeared to be essential for obtaining the epitaxial film. Surface cleaning in the experiment was done by preannealing the substrate in H2 at 730 °C with Hg‐Xe lamp light irradiation. The film was characterized by etching, electron channeling pattern observation, Raman scattering spectroscopy, and spreading resistance measurement.This publication has 6 references indexed in Scilit:
- Laser-induced deposition of silicon filmsThin Solid Films, 1983
- Single Crystal Silicon Films on Amorphous Insulators: Growth by Lateral Nucleated Epitaxy Using Scanning Laser and Electron Beams and Evaluation by Electron Backscattering ContrastJournal of the Electrochemical Society, 1982
- Laser-enhanced gas–surface chemistry: Basic processes and applicationsJournal of Vacuum Science and Technology, 1982
- Laser microphotochemistry for use in solid-state electronicsIEEE Journal of Quantum Electronics, 1980
- Epitaxial Growth with Light IrradiationJapanese Journal of Applied Physics, 1968
- Low-Temperature Silicon EpitaxyJournal of the Electrochemical Society, 1968