A new nonlinear relaxation scheme for solving semiconductor device equations
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 10 (9) , 1175-1186
- https://doi.org/10.1109/43.85764
Abstract
In most cases steady-state semiconductor device equations are solved simultaneously by Newton's method, by Gummel's decoupled nonlinear relaxation scheme, or a combination of both. A framework deriving such different iterative methods from underlying variable transformations is presented. Within that framework the introduction of a new variable establishes a new nonlinear relaxation scheme, which is significantly faster than Gummel's scheme in cases where it converges slowly, thereby avoiding the drawbacks of a simultaneous solution method. This relaxation scheme has been implemented in the two-dimensional device simulator GALENE IIKeywords
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