A planar resonant-tunneling field-effect transistor

• 1 November 1989
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
• Vol. 36  (11) , 2617
• https://doi.org/10.1109/16.43732

Abstract

Keywords

• III-V SEMICONDUCTORS
• ALUMINIUM COMPOUNDS
• CURRENT FLUCTUATIONS
• FIELD EFFECT TRANSISTORS
• GALLIUM ARSENIDE
• TUNNELLING
• 4.2 K
• GAAS-ALGAAS MODULATION DOPED HETEROSTRUCTURES
• DOUBLE BARRIER TRANSISTORS
• GATE BIAS
• GATE-INDUCED BARRIERS
• MOLECULAR BEAM EPITAXY
• OSCILLATORY BEHAVIOR
• PLANAR RESONANT-TUNNELING FIELD-EFFECT TRANSISTOR
• REGULAR FET MODE
• SOURCE-DRAIN CURRENT
• TRIPLE BARRIER TRANSISTORS