Deposition of diamond films at low pressures and their characterization by positron annihilation, Raman, scanning electron microscopy, and x-ray photoelectron spectroscopy
- 30 April 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (18) , 1781-1783
- https://doi.org/10.1063/1.103098
Abstract
We have deposited diamond films with micron-size crystals on Si〈111〉 using low-pressure hot-filament-assisted chemical vapor deposition. These films have been characterized by positron annihilation, Raman spectroscopy, scanning electron microscopy, and x-ray photoelectron spectroscopy. In addition to the results for the electronic structure and morphology, we also present new results for the lattice defects present in these films.Keywords
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