Hot-electron magnetophonon effect and Fourier analysis in n-GaAs

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Abstract
Magnetophonon resonance of longitudinal magnetoresistance has been investigated in high-purity epitaxial n-GaAs at temperatures between 12 and 77K using the magnetic-field modulation technique. At high temperatures (T>48K) the maxima associated with electron transition from the Landau level to the impurity donors are observed in addition to the ordinary magnetophonon peaks resulting from electron transition between Landau levels due to emission or absorption of a single LO phonon. At lower temperatures (T<48K) maxima associated with electron transition accompanied by simultaneous emission of two TA phonons at the X point are clearly observed besides the impurity series. Fourier transform analysis provides information about the relative importance of the three different processes as the temperature or the electric field is changed.