Charge transfer from chemical shifts at (110) surfaces of III–V compound semiconductors
- 30 April 1986
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 58 (3) , 215-217
- https://doi.org/10.1016/0038-1098(86)90846-x
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Semiconductor surface structuresSurface Science Reports, 1983
- Surface core-level shifts of 4d states of (110) cleaved InSbJournal of Physics C: Solid State Physics, 1983
- Madelung effects at crystal surfaces: Implications for photoemissionPhysical Review B, 1981
- Reaction of oxygen with gallium surfacesSurface Science, 1981
- Surface Core-Level Binding-Energy Shifts for GaAs(110) and GaSb(110)Physical Review Letters, 1980
- Core-level binding energies in metalsJournal of Electron Spectroscopy and Related Phenomena, 1980
- Electronic surface properties of Ga and In containing III–V compoundsJournal of Vacuum Science and Technology, 1977
- Densities of valence states of amorphous and crystalline III-V and II-VI semiconductorsPhysical Review B, 1974
- Theory and Observation of Intrinsic Surface States on Ionic CrystalsPhysical Review B, 1966
- The Dipole Moment of Hydrogen Fluoride and the Ionic Character of BondsJournal of the American Chemical Society, 1946