Observation of reversible collapse phenomena in GaAs MESFETs at cryogenic temperatures
- 21 November 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (24) , 2297-2298
- https://doi.org/10.1049/el:19911420
Abstract
A major change has been verified in the characteristics of GaAs MESFETs at 77K and at 4K after they have been subject to a drain voltage excursion larger than a threshold which depends on the transistor type. MESFETs can be recovered from collapse by inverting the drain and source terminals and applying a voltage excursion of a few volts. The collapse of a 3SK164 double-gate GaAs MESFET after a voltage excursion of 10V is illustrated as a typical case.Keywords
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