Abstract
As is well-known, the various physical properties of semiconductors are essentially determined by the existence of the so-called quasi-atomic states in the forbidden region of energy band system characteristic for the body crystal. Since the lattice imperfections due to the inclusion of foreign atoms and stoichiometric excess-atoms, the internal cracks within the crystals or other mechanism may be considered to become possible origins which give rise to the mentioned quasi-atomic states, the consistent, theoretical attack of semiconductors will be necessarily confronted with a difficult problem of treating mathematically the imperfect crystals, while in the perfect crystals the method of solution of Schrödinger wave equation is well known to be much simplified owing to the periodicity and symmetry valid within the perfect crystals. In addition to the mentioned theoretical difficulty in solving the wave equation of the imperfect crystal, the vast experimental investigations of the physical properties of semiconductors reveal that even the experimental data of the same kind of semiconductors are always at variance with each other, showing the sensitive dependencies of the materials upon the experimental method of preparations. Such experimental difficulties to get the precise reproduction of the materials with consistent physical properties will become serious obstacles for proceeding the reliable physical considerations of the semiconductors.

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