Ion energy-dependent electrical properties of sulfur implants in GaAs
- 1 March 1982
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (3) , 1812-1814
- https://doi.org/10.1063/1.330593
Abstract
The dependence upon ion energy of the electrical properties of sulfur‐implanted GaAs was investigated. For low doses, electrical activation was found to increase with energy up to 300 keV and then decrease with increasing energy. A correlation was found between the activation dependence upon energy and upon dose. An activation efficiency of 80% was obtained for a dose of 4×1013/cm2 at 300 keV. The carrier‐profile dependence upon the energy was also determined, showing a maximum carrier concentration of 1×1018/cm3.This publication has 3 references indexed in Scilit:
- The role of elevated temperatures in the implantation of GaAsSolid-State Electronics, 1975
- Electrical and cathodoluminescence measurements on ion implanted donor layers in GaAsSolid-State Electronics, 1975
- Properties of ion implanted silicon, sulfur, and carbon in gallium arsenideRadiation Effects, 1970