Composition Dependence of Photoelectric Characteristics of Cs−Sb Compounds

Abstract
Cesium antimonide photocathodes having various compositions can be prepared. The changes in the photoemissive yield and the resistance correspond reversibly to the changes in the amount of Cs. The maximum yield is attained in a composition Cs3−δSb, which is a p‐type material (δ is a positive fraction). If the formation of a Cs−Sb photocathode is carried out under a Cs pressure about 10−5 Torr at 170°C, the photocathode maintains the most suitable composition for photoemissive yield. By flowing a Cs ion current through the Cs−Sb film, a p‐n junction is formed in it. The mobility of Cs ions is responsible for the change in photoemissive yield during the operation.

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