Epitaxial Growth of Mirror Smooth Ge on GaAs and Ge by the Low Temperature GeI[sub 2] Disproportionate Reaction

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Abstract
Ge epitaxial layers were grown by the disproportionation reaction at 350°C on (110) semi‐insulating and Ge substrates. The epitaxial surfaces are comparable in quality to those obtained by the higher temperature hydrogen reduction of on Ge substrates. Modifications of previously reported apparatus and growing conditions which lead to the enhanced surface qualities are described. These modifications include an increase in average linear gas stream velocity and concentrations, improved substrate surface preparation techniques, and the protection of the wafer surface from spurious nucleation during the growth process.

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