Abstract
Rules are given which govern the formation of domains and dislocations in the charge-density-wave states of 2H-TaSe2. New dislocations are described, and it is pointed out that three different types of dislocations are found frequently in 2H-TaSe2. Various processes involving dislocations are described, and a dislocation Burgers vector which is conserved in these processes is defined. An equation of motion for a dislocation is proposed.