Reaction Mechanism of GaAs Vapor‐Phase Epitaxy

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Abstract
Reaction mechanisms of epitaxial growth using and systems have been investigated by means of infrared spectroscopy, and probable reaction models are discussed. Over the whole temperature range of , dominant gallium chlorides observed by a sampling method are and an unidentified gallium compound with chlorine that has an absorption band at 1600 cm−1 in the hydrogen carrier system, but only in the nitrogen carrier system. Analyses by a mechanical balance have suggested that sampled from a reactor should dimerize into the greater part of in a gas cell. A photoenhancement of reduction by has been examined by irradiating with an excimer laser. A photoexcitation of has been ascertained, and epitaxial growth with a single flat temperature profile has been realized at low temperatures below 600°C by irradiation with a 249 nm laser.

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