Interfacial electrical properties of ion-beam sputter deposited amorphous carbon on silicon

1 May 1983

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 4 (5) , 146-149
https://doi.org/10.1109/edl.1983.25682

Abstract

Amorphous, "diamond-like" Carbon films have been deposited on Si substrates, using ion-beam sputtering. The interfacial properties are studied using capacitance and conductance measurements. Data are analyzed using existing theories for interfacial electrical properties. The density of electronic states at the interface, along with corresponding time constants are determined, and the density of interface states is unusually low for an as yet unoptimized.

Keywords

AMORPHOUS MATERIALS
SILICON
OPTICAL FILMS
SEMICONDUCTOR FILMS
SPUTTERING
NASA
ETCHING
CAPACITANCE MEASUREMENT
INTERFACE STATES
ION BEAMS

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