Infrared Hot-Electron Phototransistor
- 1 January 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (1R) , 78-82
- https://doi.org/10.1143/jjap.33.78
Abstract
A hot-electron phototransistor (HEPT) is proposed and discussed. The HEPT utilizes the intraband absorption of radiation in the base. This two-terminal device can operate as a photodetector for the infrared region of spectrum. Photoelectric performances of the HEPT are evaluated using an analytical model.Keywords
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