Bifurcation scenarios of spatio-temporal spiking in semiconductor devices
- 28 November 1994
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 195 (2) , 144-150
- https://doi.org/10.1016/0375-9601(94)90087-6
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Spiking in an activator-inhibitor model for elements with S-shaped negative differential conductivityZeitschrift für Physik B Condensed Matter, 1994
- Periodic and irregular spatio-temporal behaviour of current density filaments in Si p+−n+ −p−n− diodesPhysics Letters A, 1993
- Spatio-temporal dynamics of vertical charge transport in a semiconductor heterostructureSemiconductor Science and Technology, 1992
- Spatial and Spatio‐Temporal Patterns in pnpn Semiconductor DevicesPhysica Status Solidi (b), 1992
- Regular and chaotic current oscillations inn-type GaAs in transverse and longitudinal magnetic fieldsPhysical Review B, 1992
- Observation of spatio-temporal structures due to current filaments in Si pin diodesPhysics Letters A, 1991
- Classification of spontaneous oscillations at the onset of avalanche breakdown inp-type germaniumPhysical Review B, 1991
- AutosolitonsSoviet Physics Uspekhi, 1989
- Nonlinear response and chaos in semiconductors induced by impact ionizationApplied Physics A, 1989
- Lyapunov Characteristic Exponents for smooth dynamical systems and for hamiltonian systems; a method for computing all of them. Part 1: TheoryMeccanica, 1980