Depletion mode MOSFET modelling for CAD
- 1 January 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Proceedings I Solid State and Electron Devices
- Vol. 130 (6) , 281-286
- https://doi.org/10.1049/ip-i-1.1983.0050
Abstract
A simple CAD model for the I/V characteristics of long-channel depletion-mode MOSFETs is presented. The model is applicable to both shallow and deep channel devices and provides a complete set of characterisation equations for eachmode of operation. The model also enhances qualitative understanding of the device behaviour and provides direct correlation between the electrical characteristics and the physical, technological and geometrical design parameters of the MOSFETs. Good agreement between the simplified model and measured device characteristics justifies its validity.Keywords
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