Electron Bombardment Conductivity in Diamond

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Abstract
A study has been made of electron bombardment conductivity in diamond using primary electrons of energies up to 14,000 ev. An alternating field method is used which reduces or eliminates the effects of internal space charge fields. Data on internal yields as a function of crystal field are given for both electron and positive hole carriers. Internal yields as high as 600 have been attained. The experimental curves are fitted to a theoretical curve for the space charge free crystal from which are derived reasonable values for the number of electrons produced in the conduction band per incident primary electron, the probable life time of the conduction electrons and the crystal trap density. Experiments are described which lead to a hypothesis of space charge neutralization. A possible cause of the current fluctuations observed at high crystal fields is discussed.