Properties of Boron-Doped Epitaxial Diamond Films
- 1 May 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (5R) , 824-827
- https://doi.org/10.1143/jjap.29.824
Abstract
Boron-doped homo-epitaxial films were deposited by microwave plasma CVD on synthesized single-crystal diamonds. Boron concentration in the films was determined by the boron concentration in the reactant gases. The crystallinity of boron- doped films was found to be affected by the boron concentration in the reactant gases. The conductivity of boron doped films was determined by the concentration of boron, and the activation energy was nearly the same as for natural IIb diamonds. The effect of the surface orientation of substrates was found in the conductivity of highly doped films. The result of the Hall effect measurement indicated that the mobility of boron-doped diamond epitaxial films was 70 cm2/V·s even at 500°C.Keywords
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