A Monte Carlo study for minority-electron transport in p-GaAs

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Abstract
Minority‐electron transport in p‐GaAs with a wide range of acceptor doping concentration from 1017 to 1019 cm−3 is studied in detail. Using the Monte Carlo method in which electron‐hole interactions are taken into account, electron transport properties in p‐GaAs, such as drift velocity and electron temperature, are calculated. The calculated results show good agreement with the experimental ones. Furthermore, in order to make the features of minority‐electron transport clear, the electron transport properties in n‐GaAs, where electrons act as majority carriers, are also calculated. In comparison with majority‐electron transport, drift velocity, and electron temperature for the minority electron are greatly reduced. Throughout the study, it is shown that the interaction with holes is essential for minority‐electron transport in p‐GaAs.