PROPERTIES OF SILICON p-n JUNCTIONS FORMED BY Cs+ IMPLANTATION AT LOW ENERGIES
- 15 December 1963
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 3 (12) , 213-215
- https://doi.org/10.1063/1.1753853
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Experimental Evidence for the Increase of Heavy Ion Ranges by Channeling in Crystalline StructurePhysical Review Letters, 1963
- Junction Formation in Silicon by Positive Ion BombardmentIEEE Transactions on Nuclear Science, 1963
- THE CHANNELING OF ENERGETIC ATOMS IN CRYSTAL LATTICESApplied Physics Letters, 1963