On the choice of optimum FET size in wide-band transimpedance amplifiers
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 6 (1) , 64-66
- https://doi.org/10.1109/50.3965
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Optimum design of a 4-Gbit/s GaAs MESFET optical preamplifierJournal of Lightwave Technology, 1987
- High-frequency noise measurements on FET's with small dimensionsIEEE Transactions on Electron Devices, 1986
- Gigahertz transresistance amplifiers in fine line NMOSIEEE Journal of Solid-State Circuits, 1984
- A single chip NMOS preamplifier for optical fiber receiversPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1983