A 400 kV High Resolution-Analytical Electron Microscope Newly Constructed

1 June 1984

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 23 (6A) , L412
https://doi.org/10.1143/jjap.23.l412

Abstract

A resolution limit of 0.23 nm has been achieved successfully by a newly constructed 400 kV analytical electron microscope equipped with an energy dispersive X-ray spectrometer. The characteristic of the new microscope is briefly described and structure images of H-Nb₂O₅ ^- and 6H-SiC crystals are obtained to show the observation capability of high resolution structure imaging.

Keywords

STRUCTURE
NEWLY
ELECTRON MICROSCOPE
ANALYTICAL ELECTRON
HIGH RESOLUTION
SUP
CRYSTALS

This publication has 2 references indexed in Scilit:

A High Resolution Lattice Image of Nb₁₂O₂₉by Means of a High Voltage Electron Microscope Newly Constructed
Japanese Journal of Applied Physics, 1976
The crystal structure of the high temperature form of niobium pentoxide
Acta Crystallographica, 1964