Growth of Co on a stepped and on a flat Cu(001) surface

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Abstract
The growth of Co on Cu(001) is investigated with scanning tunneling microscopy (STM), Auger electron spectroscopy, and low-energy electron diffraction. Island shape and size differs drastically for Co evaporated onto a flat or a stepped Cu(001) surface. Deviations from ideal layer-by-layer growth are small. Evaporating at 540 K results in an island free surface, annealing to 495 K induces depressions into the Co islands but does not change their shape and arrangement. A retarding field Auger system and an Auger spectrometer with cylindrical mirror analyzer are calibrated simultaneously with the help of the STM. © 1996 The American Physical Society.