Use of narrow collector layers in Si and Si1−xGex bipolar transistors
- 1 February 1997
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 294 (1-2) , 274-277
- https://doi.org/10.1016/s0040-6090(96)09227-9
Abstract
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This publication has 1 reference indexed in Scilit:
- New approach to the kinetics of silicon vapor phase epitaxy at reduced temperatureApplied Physics Letters, 1987