High performance W-band InAlAs-InGaAs-InP HEMTs
- 20 June 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (13) , 1149-1150
- https://doi.org/10.1049/el:19910716
Abstract
0.15 μm T-gate lattice-matched In0.52Al0.48AsIn0.53Ga0.47As-InP HEMTs with a device minimum noise figure of 1.7dB with 7.7 dB associated gain at 93 GHz have been fabricated. A single-ended active mixer was fabricated using these devices, and a conversion gain of 2.4 dB was measured with 7.3 dB single-sideband noise figure at 94 GHz. This is the first reported active mixer conversion gain at W band.Keywords
This publication has 1 reference indexed in Scilit:
- Design and performance of a 94 GHz HEMT mixerPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003