Effects of oxide-trapped charges and interface trap generation in metal/oxide/semiconductor structures with ultradry oxides after Fowler–Nordheim stressing
- 15 April 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (8) , 3903-3905
- https://doi.org/10.1063/1.344998
Abstract
The effects of charge trapping and interface trap generation in fully processed metal/oxide/semiconductor (MOS) structures with wet, dry, and ultradry oxides are investigated. This is done by measuring the electrical properties of MOS capacitors with these oxides after Fowler–Nordheim electron injection stress. The data show that ultradry oxides have more hole traps than the other two. In addition, the generation of interface traps and electron traps is smaller in the ultradry oxides than in the other two.This publication has 10 references indexed in Scilit:
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