Electrical transport properties of polycrystalline rf sputtered CdS thin films

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Abstract
Temperature dependence, in the range 150–450 K, of the resistivity and Hall mobility were studied on polycrystalline sputtered CdS thin films. The room-temperature values of analyzed samples for resistivities and Hall mobilities ranged between 1–108 Ω cm and 2–8 cm2/V s. The results showed a major scattering mechanism controlled by the intergrain barrier height, the carriers being thermally activated. A temperature dependence of the barrier height φB=φ0 (1+αT) has been observed which allows fitting a general expression for Hall mobility of the form μH=11.6 exp(26.8 φ0) exp(−φ0/kT). A theoretical calculation of the μ0 parameter has been performed. The results show good agreement with the experimental data.

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