A GaAs MESFET Balanced Mixer with Very Low Intermodulation

1 January 1987

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. 2 (0149645X) , 895-898
https://doi.org/10.1109/mwsym.1987.1132562

Abstract

A new type of balanced resistive mixer has been realized by using the unbiased channel of a GaAs MESFET as the mixing element. Because this resistance is only very weakly nonlinear, very low intermodulation results. State-of-the-art second-and third-order output intercept points of 34 and 21 dBm are achieved, with 7 dB conversion loss at X band.

Keywords

GALLIUM ARSENIDE
RADIO FREQUENCY
VOLTAGE
SCHOTTKY DIODES
MICROWAVE DEVICES
RESISTORS
IMPEDANCE
EQUIVALENT CIRCUITS
MESFET CIRCUITS
FILTERS

This publication has 2 references indexed in Scilit:

Distortion performance of single-balanced diode modulators
Proceedings of the Institution of Electrical Engineers, 1970
Improved Intermodulation Rejection in Mixers
IEEE Transactions on Microwave Theory and Techniques, 1966