Ion Beam Assisted Maskless Etching of GaAs by 50 keV Focused Ion Beam
- 1 December 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (12A) , L792
- https://doi.org/10.1143/jjap.21.l792
Abstract
Maskless etching of GaAs by means of an ion beam assisted etching technique has been investigated using a 50 keV focused Au beam, and it is found that ion beam assisted etching is very promising for maskless direct etching with a high etching rate. The Au+ focused beam was irradiated on GaAs in chlorine ambient gas. It was observed that this etching technique gives a smooth etched surface with an etching rate of 2 µm·min-1·mA-1·cm2, which is about 100 times larger than the value observed for physical sputter etching without chlorine gas. From the measurement of mass spectra it was observed that about 75 percent of chlorine gas reacts with residual water vapour and HCl gas is produced. It is considered that both chlorine and HCl gases play an important role in the enhancement of etching.Keywords
This publication has 6 references indexed in Scilit:
- Fabrication of 80 nm-Wide Lines in FPM Resist by H+ Beam ExposureJapanese Journal of Applied Physics, 1981
- A novel anisotropic dry etching techniqueJournal of Vacuum Science and Technology, 1981
- Etched Profile of Si by Ion-Bombardment-Enhanced EtchingJapanese Journal of Applied Physics, 1981
- Plasma etching of III–V compound semiconductor materials and their oxidesJournal of Vacuum Science and Technology, 1981
- High-resolution, ion-beam processes for microstructure fabricationJournal of Vacuum Science and Technology, 1979
- Ion- and electron-assisted gas-surface chemistry—An important effect in plasma etchingJournal of Applied Physics, 1979