Recent Advances in the Application of Slow Positron Beams to the Study of Ion Implantation Defects in Silicon
- 1 August 2000
- journal article
- Published by Trans Tech Publications, Ltd. in Defect and Diffusion Forum
- Vol. 183-185, 41-52
- https://doi.org/10.4028/www.scientific.net/ddf.183-185.41
Abstract
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