Image contrast of triple loops in tellurium-doped gallium arsenide

Abstract
The contrast of the bounding partial dislocations of three-layer loops in tellurium-doped gallium arsenide has been examined in the electron microscope and compared with the calculated dislocation profiles for different diffracting conditions. The triple loops are shown to consist of three overlapping extrinsic stacking faults, each fault bounded by a Frank partial dislocation with Burgers vector b=+1/3 [lll].