The Energetics of Electron Transfer at the Polypyrrole/Silicon Interface

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Abstract
A variety of annealing steps in IC processing presently performed in conventional furnaces may be readily transferred to more convenient rapid annealing furnaces. A comparison of the activation characteristics achieved for common implanted species (Si, Se, Be, Mg, and Zn) into semi‐insulating by both annealing regimes is given. The limitations and advantages of the two methods with respect to encapsulation requirements, throughput, and handling are discussed.

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