Piezoresistive simulation in MOSFETs
- 31 August 1993
- journal article
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 37-38, 357-364
- https://doi.org/10.1016/0924-4247(93)80061-k
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Piezoresistivity effects in N-MOSFET devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Off-equilibrium population of holes in the stress-split valence bands in photoexcited silicon and germaniumPhysical Review B, 1990
- Effect of uniaxial stress on shallow acceptor states in silicon and germaniumIl Nuovo Cimento D, 1987
- A mobility model for carriers in the MOS inversion layerIEEE Transactions on Electron Devices, 1983
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972
- Cyclotron Resonance in Uniaxially Stressed Silicon. II. Nature of the Covalent BondPhysical Review B, 1965
- Cyclotron Resonance Experiments in Uniaxially Stressed Silicon: Valence Band Inverse Mass Parameters and Deformation PotentialsPhysical Review B, 1963