Preferential Etching of InGaAsP / InP Using Low Temperature Bromine/Methanol for Planar Buried Heterostructure Lasers
- 1 June 1989
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 136 (6) , 1828-1830
- https://doi.org/10.1149/1.2097031
Abstract
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