Trap Generation Induced by Local Distortion in Amorphous Silicon Dioxide Film
- 1 February 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (2S)
- https://doi.org/10.1143/jjap.35.1540
Abstract
The generation mechanism, the stable atomic configuration, and the properties of intrinsic charge traps in amorphous silicon dioxide (a-SiO2) are investigated employing the ab initio molecular orbital method applied to a cluster model. It is found that an injected hole is trapped in a nonbonding 2p orbital of an oxygen atom even though there are initially no defects and impurities in a-SiO2. Thus, it acts as a trap for an electron. The local distortion in a-SiO2 structure, especially the stretching of a Si–O–Si, induces the hole trapping. It is also found that the effect of the local distortion on electron trapping is small.Keywords
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