Diffusion Effects in Drift Mobility Measurements in Semiconductors
- 1 April 1956
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 27 (4) , 341-343
- https://doi.org/10.1063/1.1722372
Abstract
Drift mobility measurements in semiconductors using small steady dc fields are described. It is necessary in such cases to take diffusion as well as drift into account in calculating the mobility from the transit time, and a calculation is made which considers both effects. If the diffusion corrections are made, one may eliminate the pulsed sweep fields which are customarily used in these experiments. Measurements of transit time vs sweep field show that the diffusion corrections are in agreement with experiment.This publication has 9 references indexed in Scilit:
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