Thermal Oxidation of Reactively Sputtered Titanium Nitride and Hafnium Nitride Films

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Abstract
The oxidation behavior of reactively sputtered and thin films was investigated for oxide formation in dry and wet oxidizing ambient in the temperature range of 425°–800°C. For both cases, formation of a single‐oxide phase, rutile for oxidized and monoclinic for oxidized , was observed. The oxidation process is thermally activated, and it has a parabolic time dependence, except in the case of wet oxidized where nonuniform oxidation behavior was observed. The parabolic time dependence of the oxide growth is attributed to a transport‐controlled process which is limited by the diffusivity of the oxidant in the oxide. The dry oxidation of is much faster than the dry oxidation of at a given temperature. The oxidation rate is always higher in a wet than in a dry ambient.

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