Layer-by-layer epitaxial growth of a Bi2Sr2CuO6 thin film on a Bi2Sr2CaCu2O8 single crystal

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Abstract
The epitaxial growth of a Bi2Sr2CuO6 (2201) thin film on a Bi2Sr2CaCu2O8 (2212) single crystal has been performed using computer‐controlled laser molecular beam epitaxy. The surface of the 2212 single crystal used as the substrate is smooth and invariant under the growth condition at 640 °C in NO2 pressure of 1×10−5 mbar. The growth process of the 2201 film has been observed by in situ reflection high‐energy electron diffraction (RHEED), and the layer‐by‐layer growth of the 2201 phase is confirmed by the oscillation of RHEED intensities. During the growth, a modulated surface structure which is characteristic of the Bi cuprate crystals is always present.