Dielectric Function of Semiconductors
- 1 January 1969
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 31 (1) , 17-23
- https://doi.org/10.1002/pssb.19690310103
Abstract
The real part of the dielectric function ϵ(q, ω) is obtained in the random phase approximation for semiconductors. If the first interband transition is forbidden, the following limits are obtained from the general formula for ϵ(q, ω) involving a finite energy gap EG: EG → 0, ω = 0, then ϵ(q, 0) ∝ q−1; EG → 0, q = 0, then ϵ(0, ω) ∝ ω−1/2; EG small, q = ω = 0, then ϵ(0, 0) α EG−1/2.Keywords
This publication has 5 references indexed in Scilit:
- Frequency-Dependent Dielectric Function of a Zero-Gap SemiconductorPhysical Review Letters, 1968
- Static Dielectric Function of a Zero-Gap SemiconductorPhysical Review Letters, 1968
- Excitonic InsulatorPhysical Review B, 1967
- Wave-Number-Dependent Dielectric Function of SemiconductorsPhysical Review B, 1962
- A dielectric formulation of the many body problem: Application to the free electron gasIl Nuovo Cimento (1869-1876), 1958