Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics
- 29 November 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (22) , 3548-3550
- https://doi.org/10.1063/1.125384
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Fluctuation Controlled Hopping of Bound Magnetic Polarons in ErAs:GaAs NanocompositesPhysical Review Letters, 1999
- High-speed low-temperature-grown GaAs p-i-n traveling-wave photodetectorIEEE Photonics Technology Letters, 1998
- Optical and terahertz power limits in the low-temperature-grown GaAs photomixersApplied Physics Letters, 1997
- Real-time simultaneous optical-based flux monitoring of Al, Ga, and In using atomic absorption for molecular beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Characteristics and device applications of erbium doped III-V semiconductors grown by molecular beam epitaxyJournal of Electronic Materials, 1996
- Self-organizing growth of erbium arsenide quantum dots and wires in gallium arsenide by molecular beam epitaxyApplied Physics Letters, 1994
- Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesApplied Physics Letters, 1993
- Picosecond carrier lifetime in erbium-doped-GaAsApplied Physics Letters, 1993
- Microstructure of epitactically grown GaAs/ErAs/GaAsApplied Physics Letters, 1990
- Stable and epitaxial metal/III-V semiconductor heterostructuresMaterials Science Reports, 1990