High performance InP/InGaAs/InP DHBTs with patterned sub-collector fabricated by elevated temperature N+ implant
- 30 June 2005
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 49 (6) , 981-985
- https://doi.org/10.1016/j.sse.2005.03.013
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Patterned n$ +$Implant Into InP Substrate for HBT SubcollectorIEEE Transactions on Electron Devices, 2004
- InP HBT integrated circuit technology with selectively implanted subcollector and regrown device layersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Further evidence of chromium, manganese, iron, and zinc redistribution in indium phosphide after annealingJournal of Applied Physics, 1985