Molecular dynamics calculations of defect energetics in β-SiC
- 30 September 1994
- journal article
- Published by Elsevier in Journal of Nuclear Materials
- Vol. 212-215, 148-153
- https://doi.org/10.1016/0022-3115(94)90046-9
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Theory of native defects, doping and diffusion in diamond and silicon carbideMaterials Science and Engineering: B, 1992
- Molecular dynamics of collision cascades with composite pair–many-body potentialsPhysical Review B, 1991
- Computer modeling of Si and SiC surfaces and surface processes relevant to crystal growth from the vaporJournal of Crystal Growth, 1984
- Self-diffusion of silicon-30 in ?-SiC single crystalsJournal of Materials Science, 1981
- Self-diffusion of 30Si in polycrystalline ?-SiCJournal of Materials Science, 1980
- Hard-Sphere Pressure Bound from a Reformulation of Solid-Phase ThermodynamicsThe Journal of Chemical Physics, 1971
- Luminescence of Donor-Acceptor Pairs in Cubic SiCPhysical Review B, 1970
- Calculation of the Formation Energy of a Schottky Defect in GermaniumPhysical Review B, 1968
- New Method for Treating Lattice Point Defects in Covalent CrystalsPhysical Review B, 1965
- Verzerrungsfeld und mechanische Relaxation von Leerstellen in GermaniumPhysica Status Solidi (b), 1963